After coating the substrates were dried in a tube furnace at 120��C for 5min. This cycle (spin-coating www.selleckchem.com/products/17-AAG(Geldanamycin).html and drying) was repeated for 6 times. Finally the substrates were annealed at 500��C for 60min in order to remove volatile chemicals from the surface. After these processes, both of the samples (CBD and sol-gel) were placed in a physical vapor deposition (PVD) system. Au was evaporated through a shadow mask in a vacuum of 10?5 Torr. In this way, Au/CuO/p-Si/Al metal-insulator-semiconductor (MIS) structures were obtained. The areas of circular Schottky contacts were adjusted to 7.85 �� 10?3cm2.2.3. Characterization of the SamplesCrystal structure of the films was examined by a Rigaku Ultima-IV X-ray diffractometer (XRD) (Cu K�� radiation, �� = 1.540056?). A scan rate 0.

05��/min was applied to record the patterns in the 2�� range of 30�C80��. A JEOL JSM-5500LV scanning electron microscope (SEM) was operated at an acceleration voltage of 10 and 20kV for morphological imaging. A computer interfaced Keithley 6487 Picoammeter/Voltage Source was used to investigate the diode parameters of the samples.3. Results and Discussion3.1. Morphological and Structural Characterization of CuO FilmsMorphology of the films was investigated by scanning electron microscopy. As seen from Figure 1, CuO nanostructures were grown in two different shapes on p-Si substrate. Figure 1(a) shows the SEM image of the nanostructures that were grown by CBD method. From this figure, it was seen that the needle-like nanostructures were firmly clasped together, thus formed clusters on the surface.

Average thickness, length, and cluster diameter of the nanostructures were found to be ~97, 710, and 870nm, respectively. On the other hand, Figure 1(b) shows the SEM image of the nanostructures that were grown by sol gel method. As seen from the figure the nanostructures were formed as nearly cubic shaped. Contrary to Figure 1(a), the structures were grown individually, that is, they are not connected to each other. This discreetness will affect the ideality factors and the barrier heights of the MIS structures that will be explained in the following section. The average diameter of the structures was found to be 340nm. From these two figures, it is obviously seen that the growth method has a deep impact on the morphology of the structures. Figure 1SEM images of the CuO films growth by the (a) CBD method and (b) sol-gel method.The crystal structures of the films were examined by an X-ray diffractometer. The XRD patterns of CuO films grown on the Si substrate Anacetrapib are shown in Figure 2. All diffraction peaks can be clearly indexed to monoclinic CuO phase with lattice constants of a = 4.680?, b = 3.431?, c = 5.136?, and �� = 99.26�� (reference code: 01-080-0076).