Athens; 2009:217 67 Schindler C, Thermadam SCP, Waser R, Kozick

Athens; 2009:217. 67. Schindler C, Thermadam SCP, Waser R, Kozicki MN: Bipolar and unipolar resistive switching in Cu-doped SiO 2 . IEEE Trans Electron Devices 2007, 54:2762.CrossRef 68. Hsiung CP, Liao HW, Gan JY, Wu TB, Hwang JC, Chen F, Tsai MJ: Formation and instability of silver nanofilament in Ag-based programmable metallization cells. ACS Nano 2010, 4:5414.CrossRef 69. Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M: Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS Nano 2010, 4:6162.CrossRef

70. Nagata T, Haemori M, Yamashita Y, Yoshikawa H, Iwashita Y, Kobayashi K, Chikyow T: Bias application hard X-ray photoelectron spectroscopy study of forming process of Cu/HfO 2 /Pt resistive random access memory structure. Appl Phys Lett 2011, 99:223517.CrossRef 71. Yoon J, Choi H, Lee D, Park JB, Lee J, Seong DJ, Ju Y, Chang M, Jung S, Hwang H: selleck screening library Excellent switching uniformity of Cu-doped MoO x /GdO x bilayer for nonvolatile memory applications. IEEE Electron Device Lett 2009, 30:457.CrossRef 72. Tada M, Sakamoto T, Banno N, Aono M, Hada this website H, Kasai N: Nonvolatile crossbar switch using TiO x /TaSiO y solid electrolyte. IEEE Trans Electron Devices 1987, 2010:57. 73. Goux L, Opsomer K, Degraeve R, Muller R, Detavernier

C, Wouters DJ, Jurczak M, Altimime L, Kittl JA: Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al 2 O 3 /Si cells. Appl Phys Lett 2011, 99:053502.CrossRef 74. Kim DC, Seo S, Ahn SE, Suh DS, Lee MJ, Park BH, Yoo IK, Baek IG, Kim HJ, Yim EK, Lee JE, Park SO, Kim HS, Chung UI, Moon JT, Ryu BI: Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Appl Phys Lett 2006, 88:202102.CrossRef 75.

Ielmini D, Nardi F, Cagli C: Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories. Nanotechnology 2011, 22:254022.CrossRef 76. Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix Selleckchem C59 H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallée C, Perniola L, De Salvo B: Comparative study of non-polar switching behaviors of NiO- and HfO 2 -based oxide resistive-RAMs. Solid-State Electron 2011, 58:62.CrossRef 77. Yang JJ, Pickett MD, Li X, Ohlberg DAA, Stewart DR, Williams RS: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 2008, 3:429.CrossRef 78. Hermes C, Bruchhaus R, Waser R: Forming-free TiO 2 -based resistive switching devices on CMOS-compatible Staurosporine nmr W-plugs. IEEE Electron Device Lett 2011, 32:1588.CrossRef 79. Park J, Biju KP, Jung S, Lee W, Lee J, Kim S, Park S, Shin J, Hwang H: Multibit operation of TiO x -based ReRAM by Schottky barrier height engineering. IEEE Electron Device Lett 2011, 32:476.

Comments are closed.