Studies by Tung revealed that this kind of inhomogeneous behavior is observed in all semiconductors and results in overall decreased barrier heights [4]. The contamination level and oxide layer can be minimized by following fabrication steps in a clean room and depositing Schottky metals 4SC-202 supplier in ultra high vacuum (UHV). According to the Schottky-Mott model, the Schottky barrier height is dependent on the metal work function and electron affinity of semiconductor χ (GaN χ = 4.1 eV)

[1, 5, 6]. Metals like Pt, Ni, Pd, and Au which have high work function than GaN make a better choice for gate contact. Pt has a high work function (5.65 eV) that makes it ideal for use as Schottky contacts on n-type GaN, and it is also resistant to oxidation and corrosion [1]. There are only a few reports on Pt/GaN Schottky barrier diodes.

The Schottky barrier height of Pt/n-GaN has been NVP-LDE225 molecular weight reported with a value between 0.89 and 1.27 eV [7–12]. In the present paper, we report an investigation on good-quality Pt/GaN Schottky barrier diodes deposited in ultra high vacuum condition. Temperature-dependent I-V characteristics have been measured and analyzed using the barrier inhomogeneity model proposed by Werner and Güttler [3]. Methods GaN epitaxial layers used signaling pathway in this study were grown on a c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). The GaN epitaxial layers were 3.4 μm thick and unintentionally doped (N D + approximately 3 × 1016 cm-3 by Hall measurements). For Pt/n-GaN diodes fabricated with indium ohmic contacts on n-GaN epilayers, first the sample was cleaned sequentially with (1) methylpropanol (MP) at around 80°C for

8 min, (2) deionized (DI)water dip, (3) acetone at 50°C for 7 min, (4) isopropanol in ultrasonic bath for 3 min, and again a (5) DI water rinse and dry nitrogen blowing for drying the sample. After that contact, metallization was done by lithography/lift-off techniques. Photoresist (AZ5214), developer (AZ 400 K/H2O 1:4), and native oxide layer removal (50% HCl for 1 min, rinse in H2O) were applied. Then the sample was immediately transferred to an UHV deposition facility (base pressure in the vacuum chamber was 10-10 mbar) for Pt/Au (100/100 nm) Schottky contact deposition. All these steps were carried out in a Class 100 cleanroom facility. Indium (In) ohmic contacts were deposited at two opposite edges by Non-specific serine/threonine protein kinase soldering in – second step. The schematic view of the Schottky barrier diodes fabricated in this work is shown in Figure 1. The current–voltage (I-V) characteristics of the devices were measured using a programmable Keithley SourceMeter (model 2400, Keithley Instruments, Inc., Cleveland, OH, USA) in the temperature range 100 to 380 K with a temperature step of 40 K in an LN2 cryostat. Temperature-dependent Hall and resistivity measurements on GaN epitaxial layer were performed using a variable-temperature Hall setup from Ecopia Corporation, Anyang-si, South Korea (model HMS 5300).