YL carried out the experiments and took part in writing. HH and LB participated in the experiments. SZ participated in the discussion and correction of the paper. All authors read and approved the final manuscript.”
“Background From the success of graphene growth on Ni or Cu by chemical vapor deposition

(CVD) [1, 2], some variations were introduced to CVD to avoid the use of metallic catalysts [3–8]. However, the growth of carbon by chemical methods involves a complex mechanism due www.selleckchem.com/products/gm6001.html to the presence of carrier gases. For example, hydrogen acts as an etching reagent as well as a co-catalyst [9]. In contrast, physical deposition methods such as molecular beam epitaxy (MBE) are useful to understand the growth mechanism of carbon because of the relatively simple kinetics [10–13]. Experimentally, it has been shown that nanocrystalline graphite (NCG) could be formed on crystalline and amorphous oxides by direct sublimation of carbon [14–16]. Although first-principles calculations partly explained that the strong bonding between carbon and oxygen limited the cluster size Belnacasan mw [14, 16], the growth

mechanism is yet to be understood. So far, carbon MBE has been tried on substrates containing elements from group IV [10–13], group V [17], and group VI [12, 14–16]. Here, we present the results of carbon MBE on fluorides (where the anion AZD6738 solubility dmso belongs to group VII) and compare them with similar studies on oxides to understand the effect of the anion on the quality of NCG. Since the bonding between carbon and fluorine is much stronger than the bonding between carbon and oxygen, we expected the carbon film to be more amorphous. On the contrary, NCG of good crystallinity was formed on MgF2, and the cluster size deduced from Raman spectra was even larger than those of NCGs on MgO and sapphire [18, 19]. These results show that the quality of NCG does not simply depend on the bond strength of carbon and substrate anion, and imply that the carbon growth mechanism could be more complex than previously thought. Methods Materials and film

fabrication Carbon MBE was Selleckchem Verteporfin done using a home-made ultra-high-vacuum MBE system and a carbon sublimation cell with a pyrolytic graphite filament. The pressure of the chamber was kept below 1.0×10−7 Torr during the growth by flowing liquid nitrogen in the shroud. Details about the growth procedure can be found elsewhere [14]. Fluoride substrates (MgF2(100), CaF2(100), and BaF2(111)) were purchased from a commercial vendor (CrysTec GmbH, Berlin, Germany). The growth temperature was fixed at 900°C because of the lower melting points of fluoride substrates compared to oxides. Characterization Raman scattering measurements and spatial mapping were performed using a micro-Raman spectroscope (inVia system, Renishaw, Wotton-under-Edge, UK) operated by a 514.5-nm laser. A minimal laser power of 2 mW was used during the measurements to avoid any damage or heating of the carbon films.